GAN78

gan78Besides these intrinsic advantages, there is also a great interest in the possibility to grow AlGaNGaN heterostructures on low-cost large-area (up to 200 mm) Si substrates, due toPDF | In this paper, a hh-efficiency compact power amplifier is desned and fabricated with a 0.25 μm GaN hh electron mobility transistor (HEMT) to... | Find, read